All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip

摘要

We demonstrate channel selective 0.1-Gb/s photo-receiver operation at telecomwavelength using a silicon high-Q photonic crystal nanocavity with a laterallyintegrated p-i-n diode. Due to the good crystal property of silicon themeasured dark current is only 15 pA. The linear and nonlinear characteristicsare investigated in detail, in which we found that the photo-current isenhanced of more than 100,000 due to the ultrahigh-Q (>100,000). With the helpof two-photon absorption, which is visible at a surprisingly low input power of10 nW, the quantum efficiency of this device reaches about 10%.